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FDMC86102 - N-Channel MOSFET

Datasheet Summary

Description

This N

POWERTRENCH process that incorporates Shielded Gate technology.

state resistance and yet maintain superior switching performance.

Features

  • Shielded Gate MOSFET Technology.
  • Max RDS(on) = 24 mW at VGS = 10 V, ID = 7A.
  • Max RDS(on) = 38 mW at VGS = 6 V, ID = 5 A.
  • Low Profile.
  • 1 mm max in Power 33.
  • 100% UIL Tested.
  • This Device is Pb.
  • Free, Halide Free and is RoHS Compliant.

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Datasheet preview – FDMC86102

Datasheet Details

Part number FDMC86102
Manufacturer ON Semiconductor
File Size 433.31 KB
Description N-Channel MOSFET
Datasheet download datasheet FDMC86102 Datasheet
Additional preview pages of the FDMC86102 datasheet.

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Full PDF Text Transcription

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MOSFET – N-Channel, Shielded Gate, POWERTRENCH) 100 V, 20 A, 24 mW FDMC86102 General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on−state resistance and yet maintain superior switching performance.
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